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PD - 93863E
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number IRHE57Z30 IRHE53Z30 IRHE54Z30 IRHE58Z30 Radiation Level RDS(on) 100K Rads (Si) 0.07 300K Rads (Si) 0.07 500K Rads (Si) 1000K Rads (Si) 0.07 0.07
IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL
REF: MIL-PRF-19500/700
5
TECHNOLOGY
ID QPL Part Number 12A* JANSR2N7494U5 12A* JANSF2N7494U5 12A* JANSG2N7494U5 12A* JANSH2N7494U5
LCC-18
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 12* 8.0 48 25 0.2 20 156 12 2.5 2.3 -55 to 150 300 (for 5s) 0.42 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
04/26/06
IRHE57Z30, JANSR2N7495U5
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 8.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.025 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 0.07 4.0 -- 10 25 100 -100 65 20 10 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, I D = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 8.0A A VDS = VGS, ID = 1.0mA VDS 15V, IDS = 8.0A A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 12A VDS = 15V VDD = 15V, ID = 12A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2184 940 35
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12* 48 1.8 102 196
Test Conditions
A
V ns nC Tj = 25C, IS = 12A, VGS = 0V A Tj = 25C, IF = 12A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJPCB Junction-to-Case Junction-to-PC Board
Min Typ Max Units
-- -- -- -- 5.0 19
C/W
Test Conditions
Solder to a copper clad PC Board
Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHE57Z30, JANSR2N94U5
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (LCC-18) Diode Forward Voltage A Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.024 0.07 1.8 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.042 0.088 1.8 V nA A V
Test Conditions
VGS = 0V, I D = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS =0V VGS =12V, ID =8.0A VGS =12V, ID =8.0A VGS = 0V, IS =12A
1. Part numbers IRHE57Z30 (JANSR2N7494U5), IRHE53Z30 (JANSF2N7494U5) and IRHE54Z30 (JANSG2N7494U5) 2. Part number IRHE58Z30 (JANSH2N7494U5)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LET (MeV/(mg/cm2)) 28 37 60 Energy (MeV) 261 285 344 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8
35 30 25 20 15 10 5 0 0 -5 -10 VGS -15 -20
Cu Br I
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE57Z30, JANSR2N7495U5
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
5.0V
5.0V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I D , Drain-to-Source Current (A)
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
1.5
TJ = 150 C
10
1.0
0.5
1 5 6 7 8
V DS = 15V 15 20s PULSE WIDTH 9 10 11
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHE57Z30, JANSR2N94U5
4000
VGS , Gate-to-Source Voltage (V)
3200
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 12A VDS = 24V VDS = 15V
16
C, Capacitance (pF)
2400
Ciss Coss
12
1600
8
800
4
Crss
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50 60
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
ID, Drain-to-Source Current (A)
100s 10 1ms
TJ = 25 C
1
0.1 0.0
V GS = 0 V
1.5 3.0 4.5 6.0 7.5
Tc = 25C Tj = 150C Single Pulse 1 1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHE57Z30, JANSR2N7495U5
Pre-Irradiation
14
LIMITED BY PACKAGE
12
VDS VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
ID , Drain Current (A)
10 8 6 4 2 0
-V DD
Fig 10a. Switching Time Test Circuit
VDS 90%
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHE57Z30, JANSR2N94U5
EAS , Single Pulse Avalanche Energy (mJ)
400
TOP BOTTOM
300
15V
ID 5.4A 7.6A 12A
VDS
L
DRIVER
RG
D.U.T.
IAS tp
200
+ - VDD
VGS 20V
A
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V(BR)DSS tp
Starting TJ, Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
IRHE57Z30, JANSR2N7495U5
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 20V, starting TJ = 25C, L= 2.17mH Peak IL = 12A, VGS = 12V A I SD 12A, di/dt 110A/s, VDD 30V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 24 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- LCC-18
PAD ASSIGNMENTS D = DRAIN G = GATE S = SOURCE NC = NO CONNECTION
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006
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